Etching method using plasma, and method of fabricating semiconductor device including the etching method

ABSTRACT

An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H 2 O) and the plasma to a process chamber.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Provisional Patent ApplicationNo. 62/066,510, filed on Oct. 21, 2014, in the U.S. Patent and TrademarkOffice, the disclosure of which is incorporated herein in its entiretyby reference.

BACKGROUND

The inventive concept relates to a method of fabricating a semiconductordevice, and more particularly, to an etching method using plasma and amethod of fabricating a semiconductor device including the etchingmethod.

In general, a series of processes including depositions, etching,cleansing, etc. may be performed to fabricate a semiconductor device.The processes may be performed by depositions, etching, or cleaningapparatuses having process chambers. For example, the etching process isperformed in an etching apparatus having its corresponding processchamber. In the etching process, a film to be etched in the etchingprocess has a high etch rate, whereas a film to not be etched in theetching process has a low etch rate. Also, damage to the film in theetching process is reduced or avoided. To embody the above, directplasma technology such as capacitive coupled plasma (CCP) or inductivelycoupled plasma (ICP) is employed. The direct plasma technology or directplasma includes technology to directly generate plasma in a processchamber that is a wafer processing space or plasma generated thereby.However, when the direct plasma is used, the improvement of selectivityin an etching process may be restricted. Also, even a film that does notrequire etching may be damaged.

SUMMARY

The inventive concept provides an etching method using plasma which mayimprove selectivity in an etching process and also may reduce damage toa film, and a method of fabricating a semiconductor device including theetching method.

According to an aspect of the inventive concept, there is provided anetching method using plasma, which includes generating plasma bysupplying process gases to at least one remote plasma source (RPS) andapplying power to the at least one RPS, and etching an etching object bysupplying water (H₂O) and the plasma to a process chamber.

In some embodiments, the water is supplied during a pretreatment stepperformed on the etching object before an etching process or int theform of vapor during the etching process. The pretreatment step may beperformed by placing the etching object with water in a sealed space orspraying steam toward the etching object.

In some embodiments, the at least one RPS comprises at least two RPS'sand the water is supplied in the form of vapor to at least one of theRPS's, at least one path between the RPS's and the process chamber, ashower head arranged in an upper portion of an inside of the processchamber, and an entrance connected to the process chamber.

According to another aspect of the inventive concept, there is providedan etching method using plasma, which includes generating plasma bysupplying process gases to at least one remote plasma source (RPS) andapplying power to the at least one RPS, and etching an etching object bysupplying hydrogen (H₂) and the plasma to a process chamber.

In some embodiments, the at least one RPS comprises at least two RPS'sand the water is supplied in the form of vapor to at least one of theRPS's, at least one path between the RPS's and the process chamber, ashower head arranged in an upper portion of an inside of the processchamber, and an entrance connected to the process chamber.

In some embodiments, supplying process gases comprises supplyingnitrogen trifluoride (NF₃) to at least one of the RPS's, and hydrogen(H₂) is supplied to satisfy the equation,[NF₃]*D:[H₂]=2:3,wherein “[NF₃]” denotes a flow rate of NF₃, “[H₂]” denotes a flow rateof H₂, and “D” denotes a degree of dissociation of NF₃.

According to another aspect of the inventive concept, there is providedan etching method using plasma, which includes generating plasma bysupplying process gases to at least one remote plasma source (RPS) andapplying power to the at least one RPS, and etching an etching object bysupplying water (H₂O) and hydrogen (H₂) to a process chamber with theplasma.

In some embodiments, the water is supplied during a pretreatment stepperformed on the etching object before an etching process or int theform of vapor during the etching process. The pretreatment step may beperformed by placing the etching object with water in a sealed space orspraying steam toward the etching object.

In some embodiments, the at least one RPS comprises at least two RPS'sand the water is supplied in the form of vapor to at least one of theRPS's, at least one path between the RPS's and the process chamber, ashower head arranged in an upper portion of an inside of the processchamber, and an entrance connected to the process chamber.

In some embodiments, supplying process gases comprises supplyingnitrogen trifluoride (NF₃) to at least one of the RPS's, and hydrogen(H₂) is supplied to satisfy the equation,[NF₃]*D:[H₂]=2:3,wherein “[NF₃]” denotes a flow rate of NF₃, “[H₂]” denotes a flow rateof H₂, and “D” denotes a degree of dissociation of NF₃.

In some embodiments, the at least one RPS comprises at least two RPS's,and NF₃, N₂, and O₂ are supplied to a first RPS of the RPS's and O₂ andN₂ are supplied to a second RPS of the RPS's.

In some embodiments, etching the etching object comprises selectivelyetching among a silicon nitride (Si₃N₄) film and at least one of apolysilicon (p-Si) film and a silicon oxide (SiO₂) film, the siliconnitride (Si₃N₄) film.

According to another aspect of the inventive concept, there is providedan etching method using plasma, which includes generating plasma bysupplying process gases to a process chamber and applying power to theprocess chamber, and etching an etching object by supplying at least oneof water (H₂O) and hydrogen (H₂) to the process chamber with the plasma.

In some embodiments, the water is supplied through a pretreatment stepperformed on the etching object before an etching process or in the formof vapor during the etching process.

In some embodiments, the supply of the water during the pretreatmentstep is provided by placing the etching object with water in a sealedspace or spraying steam toward the etching object.

In some embodiments, the supply of the water in the form of vapor issupplied during the etching process by supplying the water in the formof vapor to a shower head arranged in an upper portion of the processchamber or to an entrance connected to the process chamber.

In some embodiments, the hydrogen is supplied to a shower head arrangedin an upper portion of the process chamber or to an entrance connectedto the process chamber.

In some embodiments, supplying process gases comprises supplyingnitrogen trifluoride (NF₃), and hydrogen (H₂) satisfy the equation,[NF₃]*D:[H₂]=2:3,

wherein “[NF₃]” denotes a flow rate of NF₃, “[H₂]” denotes a flow rateof H₂, and “D” denotes a degree of dissociation of NF₃.

According to another aspect of the inventive concept, there is provideda method of fabricating a semiconductor device, which includesgenerating plasma by supplying process gases to at least one remoteplasma source (RPS) or a process chamber and applying power to the atleast one RPS or the process chamber, etching an etching object in theprocess chamber by using at least one of water (H₂O) and hydrogen (H₂),and the plasma, and performing a subsequent semiconductor process on theetching object.

In some embodiments, the water and the hydrogen are supplied to theprocess chamber, and the water is supplied to the process chamber duringa pretreatment step of the etching object before an etching process orin the form of vapor during the etching process.

In some embodiments, the plasma is generated in the at least one RPS,the at least one RPS comprises two RPS's, and at least one of the waterand hydrogen is supplied to at least one of the RPS's, at least one pathbetween the two RPS's and the process chamber, a shower head arranged inan upper portion of the process chamber, and an entrance connected tothe process chamber.

In some embodiments, the plasma is generated in the process chamber, andat least one of the water and hydrogen is supplied to a shower headarranged in an upper portion of the process chamber, and to an entranceconnected to the process chamber.

In some embodiments, supplying the process gases comprises supplyingnitrogen trifluoride (NF₃), and hydrogen (H₂) to satisfy the equation,[NF₃]*D:[H₂]=2:3,

wherein “[NF₃]” denotes a flow rate of NF₃, “[H₂]” denotes a flow rateof H₂, and “D” denotes a degree of dissociation of NF₃.

In some embodiments, etching the etching object comprises selectivelyetching a silicon nitride (Si₃N₄) film and at least one of a polysilicon(p-Si) film and a silicon oxide (SiO₂) film, the silicon nitride (Si₃N₄)film.

According to another aspect of the inventive concept, an etching methodincludes generating a plasma; and supplying at least one of water (H₂O)and hydrogen (H₂) to an etching object in a process chamber in apresence of the plasma to etch the etching object.

In some embodiments, generating a plasma comprises supplying one or moreprocess gasses to at least one remote plasma source (RPS) and applyingpower to the RPS.

In some embodiments, generating a plasma comprises supplying one or moreprocess gasses to the process chamber and applying power to the processchamber.

In some embodiments, supplying at least one of water (H₂O) and hydrogen(H₂) to the etching object comprises a water vapor to the processchamber

In some embodiments, the at least one RPS comprises at least two RPS's,and hydrogen is supplied to at least one of the RPS's, a path betweenthe RPS's and the process chamber, a shower head arranged in an upperportion of an inside of the process chamber, and an entrance connectedto the process chamber.

In some embodiments, supplying process gases comprises supplyingnitrogen trifluoride (NF₃) to at least one of the RPS's, and hydrogen(H₂) is supplied to satisfy the equation,[NF₃]*D:[H₂]=2:3,wherein “[NF₃]” denotes a flow rate of NF₃, “[H₂]” denotes a flow rateof H₂, and “D” denotes a degree of dissociation of NF₃.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the inventive concept will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings in which:

FIG. 1 is a flowchart illustrating an etching method using plasma,according to an exemplary embodiment;

FIG. 2 is a flowchart illustrating in detail the etching method of FIG.1;

FIGS. 3A and 3B are schematic diagrams illustrating a pretreatmentprocess on an etching object by water (H₂O) in the etching method ofFIG. 2;

FIG. 4 is a flowchart for explaining in detail the etching method ofFIG. 1;

FIG. 5 is a schematic illustration of a structure of a semiconductordevice fabrication apparatus having a remote plasma source (RPS) to showa concept of supplying water to a process chamber in the etching methodof FIG. 4;

FIGS. 6 and 7 are graphs showing comparisons of an etch rate with aselectivity between a case in which water is supplied and a case inwhich water is not supplied in the etching method of FIG. 4;

FIGS. 8A and 8B are, respectively, a flowchart illustrating a method ofgenerating and supplying plasma in a semiconductor device fabricationapparatus having two RPS's and a waveform diagram of an electromagneticwave applied corresponding thereto;

FIGS. 9A and 9B are, respectively, a flowchart illustrating a method ofgenerating and supplying plasma in a semiconductor device fabricationapparatus having one RPS and a waveform diagram of an electromagneticwave applied corresponding thereto;

FIG. 10 is a flowchart illustrating an etching method using plasma,according to an exemplary embodiment;

FIG. 11 is a schematic diagram of a structure of a semiconductor devicefabrication apparatus to show a concept of supplying water to a processchamber in the etching method of FIG. 10;

FIG. 12 is a flowchart illustrating an etching method using plasma,according to an exemplary embodiment;

FIG. 13 is a flowchart illustrating in detail the etching method of FIG.12;

FIG. 14 is a schematic diagram illustrating a structure of asemiconductor device fabrication apparatus having an RPS to show aconcept of supplying hydrogen to a process chamber in the etching methodof FIG. 13;

FIGS. 15A and 15B are graphs showing comparisons of selectivityaccording to a flow rate ratio of nitrogen trifluoride (NF₃) andhydrogen (H₂) in the etching method of FIG. 14;

FIGS. 16A and 16B are graphs showing comparisons of selectivityaccording to a flow rate ratio of NF₃ and H₂ in the etching method ofFIG. 14;

FIG. 17 is a graph showing a degree of dissociation of nitrogentrifluoride as a function of applied power;

FIG. 18 is a graph showing the amount of fluorine (F) radicals as afunction of the amount of H₂;

FIG. 19 is a flowchart illustrating an etching method using plasma,according to another exemplary embodiment;

FIG. 20 is a schematic diagram of a structure of a semiconductor devicefabrication apparatus illustrating supplying hydrogen to a processchamber in the etching method of FIG. 19;

FIG. 21 is a flowchart illustrating an etching method using plasma,according to another exemplary embodiment;

FIG. 22 is a flowchart illustrating in detail the etching method of FIG.21;

FIG. 23 is a schematic diagram of a structure of a semiconductor devicefabrication apparatus having an RPS to show a concept of supplying waterand hydrogen to a process chamber in the etching method of FIG. 22;

FIG. 24 is a flowchart illustrating in detail the etching method of FIG.21;

FIG. 25 is a schematic diagram of a structure of a semiconductor devicefabrication apparatus having an RPS to show a concept of supplying waterand hydrogen to a process chamber in the etching method of FIG. 24; and

FIG. 26 is a flowchart for explaining a method of fabricating asemiconductor device including an etching method using plasma, accordingto an exemplary embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The inventive concepts will now be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsof the inventive concepts are shown. The advantages and features of theinventive concepts and methods of achieving them will be apparent fromthe following exemplary embodiments that will be described in moredetail with reference to the accompanying drawings. It should be noted,however, that the inventive concepts are not limited to the followingexemplary embodiments, and may be implemented in various forms.Accordingly, the exemplary embodiments are provided only to disclose theinventive concepts and let those skilled in the art know the category ofthe inventive concepts. In the drawings, embodiments of the inventiveconcepts are not limited to the specific examples provided herein andare exaggerated for clarity.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to limit the inventive concepts. Asused herein, the singular terms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items. Expressionssuch as “at least one of,” when preceding a list of elements, modify theentire list of elements and do not modify the individual elements of thelist.

Exemplary embodiments are provided to further completely explain thepresent inventive concept to one of ordinary skill in the art to whichthe present inventive concept pertains. However, the present inventiveconcept is not limited thereto, and it will be understood that variouschanges in form and details may be made therein without departing fromthe spirit and scope of the following claims. That is, descriptions onparticular structures or functions may be presented merely forexplaining exemplary embodiments of the present inventive concept.

In the following descriptions, when an element is described to beconnected to another element, the element may be connected directly tothe other element or a third element may be interposed therebetween.Similarly, when an element is described to exist on another element, theelement may exist directly on the other element or a third element maybe interposed therebetween. Also, the structure or size of each elementillustrated in the drawings may be exaggerated for convenience ofexplanation and clarity. In the drawings, a part that is not related toa description is omitted to clearly describe the present inventiveconcept. Like references indicate like elements in the drawings. Termsused in the present specification are used for explaining a specificexemplary embodiment, not for limiting the present inventive concept.

Additionally, the embodiment in the detailed description will bedescribed with sectional views as ideal exemplary views of the inventiveconcepts. Accordingly, shapes of the exemplary views may be modifiedaccording to manufacturing techniques and/or allowable errors.Therefore, the embodiments of the inventive concepts are not limited tothe specific shape illustrated in the exemplary views, but may includeother shapes that may be created according to manufacturing processes.Areas exemplified in the drawings have general properties, and are usedto illustrate specific shapes of elements. Thus, this should not beconstrued as limited to the scope of the inventive concepts.

FIG. 1 is a flowchart for explaining an etching method using plasma,according to an exemplary embodiment.

Referring to FIG. 1, in the etching method using plasma according to thepresent exemplary embodiment, plasma is generated in at least one remoteplasma source (RPS) (refer to 130 of FIG. 5) (S110). Plasma may begenerated by supplying a required process gas to the RPS and applyingappropriate power to the RPS under conditions of optimal pressure andtemperature. Alternatively, a plurality of RPS's may be provided and, asan applicable process gas and power are supplied to the RPS's,respectively, different types of plasma may be generated in the RPS's.

In detail, for example, a semiconductor device fabrication apparatusused for the etching method using plasma may include the RPS, and theRPS may be arranged outside a process chamber (refer to 110 of FIG. 5).As a predetermined process gas and power are applied to the RPS, plasmamay be generated. In the etching method using plasma according to thepresent exemplary embodiment, the semiconductor device fabricationapparatus may be an etching apparatus or a cleaning apparatus. In thisstate, the semiconductor device fabrication apparatus is not limited toan etching apparatus or a cleaning apparatus. Accordingly, the processgas may include at least one source gas for etching or cleaning. Forexample, the process gas may include a fluorine (F)-based source gas,for example, NF₃, CF₄, etc.

For reference, the etching method using plasma according to the presentinventive concept may include a cleaning method using plasma.Accordingly, although the following description discusses etching forclarity and convenience of explanation, the same method or principle ofthe etching may be applied to a cleaning process and the same effect ofthe etching processes described herein may be obtained in a cleaningprocess.

The RPS may generate plasma from the process gas under a predeterminedprocess condition. The predetermined process condition may be a processcondition optimized for generating plasma from the process gas. Plasmamay be used, for example, for etching an etching object. The etchingobject may be, for example, a substrate or a material film on thesubstrate. The process condition may vary according to the type of aprocess gas. The process condition may include a pressure condition, atemperature condition, etc. in the RPS. A power application method maycontribute to the generation and control of plasma. For example, togenerate plasma, an electromagnetic wave having a predeterminedfrequency and power may be applied to the RPS in the form of acontinuous wave CW or by being pulsed, with an on-off cycle The powerapplication method is described below in detail with reference to FIGS.8A to 9B.

The plasma generated by the RPS may include a plurality of components.At least one of the components may be mainly used to etch the materialfilm of the etching object. For example, the plasma may includeradicals, ions, electrons, ultraviolet light, etc. The radicals mayisotropically etch the etching object. In contrast, the ions mayanisotropically etch the etching object. This may be based on the factthat, while the radicals are electrically neutral, the ions areelectrically polarized.

Accordingly, when the etching object is completely etched to apredetermined thickness, that is, isotropically etched, the radicals maybe mainly used. In the above isotropical etching process, since theions, the electrons, the ultraviolet light, etc. may damage the etchingobject, they may be excluded from the plasma. In other words, whenplasma is supplied to the process chamber through a shower head portion(refer to 150 of FIG. 5), only the radicals may be supplied to theprocess chamber by excluding the ions, the electrons, the ultravioletlight, etc.

Alternatively, in the etching method using plasma according to thepresent exemplary embodiment, plasma may be generated by using two ormore RPS's. For example, two RPS's are arranged outside the processchamber. A first power is applied to a first RPS to generate firstplasma from a first process gas. A second power is applied to a secondRPS to generate second plasma from a second process gas. The firstprocess gas may be different than the second process gas. For example,the first process gas may include an F-based source gas and the secondprocess gas may include an oxygen (O)-based source gas. Although thefirst process gas is described as being different from the secondprocess gas, in some cases, the first process gas may be identical tothe second process gas.

When the first process gas and the second process gas are different fromeach other, first process conditions in the first RPS may be differentthan second process conditions in the second RPS. In other words, thefirst plasma may be generated in the first RPS under the first processconditions, and the second plasma may be generated in the second RPSunder the second process conditions that are different from the firstprocess conditions. The first process conditions and the second processconditions may be changed according to the types of the first processgas and the second process gas. Each of the first process conditions andthe second process conditions may include a pressure condition, atemperature condition, etc. In terms of power, in order to generate thefirst plasma in the first RPS, a first electromagnetic wave having afirst frequency and the first power may be applied to the first RPS inthe form of a continuous wave or by being pulsed, with a first on-offcycle. Also, in order to generate the second plasma in the second RPS, asecond electromagnetic wave having a second frequency and the secondpower may be applied to the second RPS in the form of a continuous wavewith or by being pulsed, with a second on-off cycle. Here, the secondfrequency, the second power, and the second on-off cycle of the secondelectromagnetic wave may be the same as or different from the firstfrequency, the first power, and the first on-off cycle of the firstelectromagnetic wave. For example, while the second frequency isidentical to the first frequency, and the second on-off cycle isidentical to the first on-off cycle, the second power may be differentthan the first power. The power application method is described below indetail with reference to FIGS. 8A to 9B.

Each of the first plasma generated in the first RPS and the secondplasma generated in the second RPS may include a plurality ofcomponents. At least one of the components is mainly used to etch theetching object. For example, while the first plasma may include firstradicals, first ions, electrons, ultraviolet light, etc., the secondplasma may include second radicals, second ions, electrons, ultravioletlight, etc. The first radicals and the second radicals may isotropicallyetch the etching object. In contrast, the first ions and the second ionsmay anisotropically etch the etching object.

Accordingly, when the etching object is isotropically etched, the firstions, the electrons, the ultraviolet light, etc. may be excluded fromthe first plasma and the second ions, the electrons, the ultravioletlight, etc. may be excluded from the second plasma. In other words, whenthe first and second plasmas are supplied to the process chamber throughthe shower head portions, only the first radicals and the secondradicals may be supplied to the process chamber, minus the first ions,the second ions, electrons, ultraviolet light, etc.

After the plasma is generated, water (H₂O) and the plasma generated inthe RPS are supplied to the process chamber and thus the etching objectis etched (S130). A method of supplying water to the process chamber maygenerally include a pretreatment method in which the etching object, forexample, a wafer, is pretreated with water and the pretreated wafer isarranged in the process chamber and a direct supply method in whichwater is supplied to the process chamber in the form of vapor via avariety of paths. In the case of the pretreatment method, thepretreatment of the etching object by using water is generally performedbefore the generation of plasma. In the direct supply method, water inthe form of vapor may be supplied in various steps before the generationof plasma, simultaneously with the generation of plasma, and after thegeneration of plasma. Accordingly, although as illustrated in FIG. 1,water and plasma are supplied to the process chamber after thegeneration of plasma and then the etching object is etched, such asequence is merely for convenience of explanation, and the supply ofwater may be performed before or simultaneously with the generation ofplasma.

The method of supplying water in the pretreatment method is describedbelow in detail with reference to FIGS. 2 to 3B and the method ofsupplying water in the direct supply method is described below in detailwith reference to FIGS. 4 and 5.

Since the etching object is etched by supplying water with plasma to theprocess chamber, the etching efficiency with respect to the etchingobject may be improved. For example, an etch rate of the etching objectmay be increased and a selectivity of the etching object may also beincreased. The etch rate may be defined to be a thickness of the etchingobject being etched per minute, and the selectivity may be defined to bean “Etch rate of etching object”/“Etch rate of non-etching object.” Theeffect or efficiency in the etching of the etching object by supplyingwater with plasma to the process chamber is described below in detailwith reference to FIGS. 6 and 7.

In the etching method using plasma according to the present exemplaryembodiment, since at least one RPS generates plasma and water and theplasma are supplied to the process chamber to etch the etching object,etching efficiency with respect to the etching object, for example, anetch rate and a selectivity of the etching object, may be increased.

FIG. 2 is a flowchart illustrating in detail the etching method usingplasma of FIG. 1. For convenience of explanation, the descriptionsprovided above with reference to FIG. 1 are briefly provided or omitted.

Referring to FIG. 2, in the etching method using plasma according to thepresent exemplary embodiment, a pretreatment of the etching object usingwater is first performed (S102). The pretreatment of the etching objectmay mean processing the etching object, for example, a wafer with water,in advance before the wafer is arranged in the process chamber. Thepretreatment of the etching object may basically mean depositing waterin the form of vapor on a surface of the etching object. Thepretreatment of the etching object is described below in detail withreference to FIGS. 3A and 3B.

The pretreated etching object is arranged in the process chamber (S104).The etching object may be arranged on an upper surface of a stage (referto 120 of FIG. 5) located in a lower portion of the process chamber. Thestage may support the etching object during an etching process, and alsothe stage may function as an electrode during the etching process. Forexample, when a bias is applied during the etching process, the stagemay function as an electrode to apply a bias to the process chamber.

After the arrangement of the etching object in the process chamber, atleast one RPS generates plasma (S110). The plasma is generated in theRPS as described above with reference to FIG. 1.

Then, the plasma generated in at least one of the RPS's is supplied tothe process chamber and thus the etching object is etched (S130 a).Although, in the exemplary embodiment of FIG. 1, water and plasmatogether are supplied to the process chamber, in the present exemplaryembodiment, water is already supplied to the process chamber when thepretreated etching object is arranged in the process chamber.Accordingly, only the plasma is supplied in the etching operation (S130a). In other words, the etching operation (S130) of the exemplaryembodiment of FIG. 1 may correspond to both the arrangement operation(S104) and the etching operation (S130 a). Since the etching operation(S130 a) of the present exemplary embodiment is described above withreference to FIG. 1, the same descriptions thereof are omitted.

FIGS. 3A and 3B are conceptual views illustrating a pretreatment processon an etching object using water in the etching method using plasma ofFIG. 2.

Referring to FIG. 3A, an etching object, for example, a plurality ofwafers 300, are kept in a container 200, which is sealed, for apredetermined time with a water reservoir 210 filled with water 230,thereby performing a pretreatment on the wafers 300. The wafers 300 maybe kept in the container 200 with the water 230, for example, for 1 to24 hours. However, the kept time is not limited thereto, and the wafers300 may be kept less than 1 hour or more than 24 hours.

When the wafers 300 are kept in the container 200 with the water 230,vapor 230 a evaporated from the water 230 may adhere on surfaces of thewafers 300. As the vapor 230 a adheres on the surfaces of the wafers300, the surfaces of the wafers 300 may be coated with the vapor 230 a.The wafers 300 coated with the vapor 230 a through the pretreatment arearranged in a process chamber 110 and thus an etching process usingplasma may be performed. As described above, the arrangement of thewafers 300 coated with the vapor 230 a in the process chamber 110 maycorrespond to the supplying of water to the process chamber 110 in theetching process using plasma.

The effect of the etching using plasma after the pretreatment of thewafers with water is described as follows: For example, when the etchingprocess using plasma is performed on a silicon nitride (Si₃N₄) filmwithout performing the pretreatment using water, an etch rate of about116 Å/min may be measured. In contrast, when the pretreatment usingwater is performed with the other conditions remaining the same, an etchrate of about 201 Å/min may be measured. Accordingly, it may be seenthat the etch rate increases by almost over 70%. Also, when thepretreatment using water is not performed, the selectivity of thesilicon nitride film with respect to a polysilicon film may be about 19,and a selectivity of the silicon nitride film with respect to a siliconoxide (SiO₂) film may be about 29. In contrast, when the pretreatmentusing water is performed, the selectivity of the silicon nitride filmwith respect to the polysilicon film may be about 32 and the selectivityof the silicon nitride film with respect to the silicon oxide film maybe about 134. Accordingly, the selectivity may be increased byperforming the pretreatment using water. In particular, the selectivityof the silicon nitride film with respect to the silicon oxide film mayincrease by over four times. Thus, when the silicon oxide film and thesilicon nitride film are included together, only the silicon nitridefilm may be very easily and stably etched by using plasma through thepretreatment using water.

Referring to FIG. 3B, as another pretreatment method, vapor or steam issprayed by using a steam ejector 240 in a container 200 a that is sealedand thus vapor 230 a is coated on surfaces of the etching object, forexample, the wafers 300, thereby performing a pretreatment on the wafers300. As such, the method using the steam ejector 240 may be used for acase in which a pretreatment that is faster than the method of keepingwafers in a container with water is needed. For example, in thepretreatment using the steam ejector 240, the wafers 300 may bepretreated within several tens of seconds to several minutes. A time forthe pretreatment using the steam ejector 240 is not limited to the abovetime, and any suitable time period may be used.

The wafers 300 coated with the vapor 230 a through the pretreatmentusing the steam ejector 240 may be arranged in the process chamber 110and thus the etching process using plasma may be performed. Thearrangement of the wafers 300 coated with the vapor 230 a in the processchamber 110 may correspond to the supplying of water to the processchamber 110 in the etching process using plasma.

FIG. 4 is a flowchart illustrating in detail the etching method usingplasma of FIG. 1.

Referring to FIG. 4, the etching method using plasma according to thepresent exemplary embodiment first generates plasma in at least one RPS(S110). The generation of plasma in the RPS is generally the same asthat described with reference to FIG. 1.

Next, water is supplied in the form of vapor to the process chamberthrough various paths (S120). For example, in FIGS. 2 to 3B, althoughwater is supplied to the process chamber in the method of pretreatingthe etching object using water, in the present exemplary embodiment, amethod of supplying water in the form of vapor to the process chamberduring the etching process using plasma may be used. For example, duringthe etching process using plasma, water may be supplied in the form ofvapor to at least one RPS. Also, water may be supplied in the form ofvapor to a plasma supply path between the at least one RPS and a showerhead, or the shower head. The water in the form of vapor supplied to theat least one RPS, the plasma supply path, or the shower head is finallysupplied to the process chamber. Alternatively, in addition to theabove-described methods, water may be supplied in the form of vapordirectly to the process chamber through an entrance that is connected tothe process chamber.

In addition, although FIG. 4 describes that water is supplied to theprocess chamber after plasma is generated, water may be supplied beforeor during the generation of plasma. The method of supplying water to theprocess chamber in the form of vapor during the etching process usingplasma is described below in detail with reference to FIG. 5.

After supplying water to the process chamber (S120), plasma is suppliedto the process chamber to etch the etching object (S130 b).Alternatively, plasma may be supplied with water or separately fromwater. For example, in the supplying water to the process chamber(S120), when water is supplied in the form of vapor to the at least oneRPS, the plasma supply path, or the shower head, plasma may be suppliedto the process chamber with water. However, when water is supplied inthe form of vapor to the process chamber through an entrance directlyconnected to the process chamber, plasma may be supplied to the processchamber separately from water.

Alternatively, as described above about the sequence between thegeneration of plasma and the supply of water, water may be suppliedbefore, in the middle of, or after the generation of plasma.Accordingly, the supply of water may be performed before, in the middleof, or after the supply of plasma to the process chamber. Also, thesupply of water may be maintained with the supply of plasma or may bediscontinued after being supplied for a predetermined time, during theetching process. For example, water is supplied for first several tensof seconds and an existing process gas may be supplied for the rest ofthe time. Furthermore, water may be intermittently supplied during theetching process. In addition, when water is supplied in the form ofvapor, the amount of water supplied may be adjusted using a mass flowcontroller (MFC) or an orifice.

In the etching method using plasma according to the present exemplaryembodiment, plasma is generated in at least one RPS and water issupplied in the form of vapor to the process chamber with plasma,thereby etching the etching object. Thus, the etching efficiency withrespect to the etching object, for example, an etch rate and aselectivity of the etching object, may be remarkably increased.

FIG. 5 is a schematic diagram illustrating a structure of asemiconductor device fabrication apparatus 100 having an RPS to show aconcept of supplying water to a process chamber in the etching methodusing plasma of FIG. 4.

Referring to FIG. 5, the etching method using plasma according to thepresent exemplary embodiment may use the semiconductor devicefabrication apparatus 100 having two RPS's. The semiconductor devicefabrication apparatus 100 may include the process chamber 110, the stage120, an RPS portion 130, and a shower head portion 150.

The semiconductor device fabrication apparatus 100 may be an apparatusthat performs depositions, etching, and cleaning processes in asemiconductor device fabrication process. Accordingly, the processchamber 110 may be a chamber that is used for the depositions, etching,and cleaning processes in a semiconductor device fabrication process. Inthe etching method using plasma according to the present exemplaryembodiment, the semiconductor device fabrication apparatus 100 may be anapparatus that performs an etching process, and the process chamber 110may be a process chamber that performs an etching process. For example,the process chamber 110 may be a plasma etching chamber where an etchingobject is etched using plasma.

The etching object may be a substrate or a material film on thesubstrate. The substrate may be a semiconductor substrate including asemiconductor material. For example, the substrate may include a GroupIV material or a Group III-V compound. Also, the substrate may be asingle crystal wafer such as a silicon single crystal wafer. However,the substrate is not limited to a single crystal wafer and may be formedbased on various wafers, for example, an epi or epitaxial wafer, apolished wafer, an annealed wafer, a silicon on insulator (SOI) wafer,etc. The epitaxial wafer means a wafer obtained by growing a crystalmaterial on a single crystal silicon substrate.

Alternatively, the material film on the substrate may be an insulatingfilm or a conductive film formed on the substrate through variousmethods, for example, deposition, coating, or plating. For example, theinsulating film may be an oxide film, a nitride film, or an oxynitridefilm, and the conductive film may be a metal film or a polysilicon film.Alternatively, the material film may be a single film or a multi-filmstructure formed on an entire surface of the substrate. Also, thematerial film may be formed on the substrate in a predetermined pattern.Accordingly, in FIG. 5, the etching object 300 arranged on the stage 120may be the substrate itself or a substrate structure including thematerial film on the substrate.

The stage 120 may be arranged in a lower portion of the process chamber110. The etching object 300 to be etched may be placed on an uppersurface of the stage 120. The stage 120 may support the etching object300 during the etching process. Also, the stage 120 may function as anelectrode during the etching process. For example, when a bias isapplied to the process chamber 110 during the etching process, the stage120 may function as an electrode.

Alternatively, as illustrated in FIG. 5, in the semiconductor devicefabrication apparatus 100, plasma may not be generated directly in theprocess chamber 110 and may be generated in the RPS portion 130 andsupplied to the process chamber 110. For reference, a CCP method or ICPmethod may be used as direct plasma technology for generating plasmadirectly in the process chamber 100. However, in the direct plasmatechnology, there may be a limit in improving the selectivity and a filmthat does not require etching may be damaged, as described above.

The RPS portion 130 may include a first RPS 132 and a second RPS 134.For reference, an RPS or an RPS apparatus (hereinafter, collectivelyreferred to as the RPS) may be a sort of separate plasma chamber that isoutside the process chamber 110 where etching is performed and generatesplasma separately in the etching process. Although FIG. 5 illustratesthat the RPS portion 130 includes two RPS's, the RPS portion 130 is notlimited to two RPS's and may include three or more RPS's. Also, in somecases, the RPS portion 130 may include only one RPS.

The first RPS 132 may generate a first plasma from the first process gaswith application of the first power under the first process conditions.The first process gas may include at least one source gas for etching.For example, the first process gas may include an F-based source gas,for example, NF₃, CF₄, etc. The first process gas may further includeother process gases than the fluorine (F)-based gas, for example, N₂,O₂, N₂O, NO, Ar, He, H₂, etc. In the etching method using plasmaaccording to the present exemplary embodiment, the first process gas mayinclude NF₃, N₂, O₂, etc. However, the first process gas is not limitedto the above-described gases, and any suitable process gas may be used.

The first process conditions may include a pressure condition, atemperature condition, etc. and may be changed according to the type ofthe first process gas. In order to generate the first plasma, the firstelectromagnetic wave having the first frequency and the first power maybe applied to the first RPS in the form of a continuous wave or by beingpulsed, with the first on-off cycle.

The generated first plasma may include a plurality of components. Atleast one of the components may be used for etching the etching object300. For example, the first plasma may include the first radicals, thefirst ions, electrons, ultraviolet light, etc. As described above, whilethe first radicals may isotropically etch the etching object 300, thefirst ions may anisotropically etch the etching object 300. Accordingly,when the etching object 300 is isotropically etched, the first ions,electrons, ultraviolet light, etc. are excluded by the shower headportion 150 and only the first radicals may be provided to the processchamber 110.

The second RPS 134 may generate second plasma from the second processgas with the application of the second power under the second processconditions. The second process gas may include at least one source gasfor etching. The second process gas may be different from the firstprocess gas. However, a case in which the second process gas is the sameas the first process gas may not be excluded, and the first and secondprocess gases may be the same. For example, the second process gas mayinclude an O-based gas, for example, O₂, N₂O, NO, etc. Also, the secondprocess gas may further include other process gases than the O-basedgas, for example, N₂, Ar, He, H₂, etc. The fluorine (F)-based gas suchas NF₃ may be further included. In the etching method using plasmaaccording to the present exemplary embodiment, the second process gasmay include N₂, O₂, etc. However, the second process gas is not limitedto the above-described gases, and any suitable process gas may be used.

The second process conditions may include a pressure condition, atemperature condition, etc. and may be changed according to the type ofthe second process gas. In order to generate the second plasma, thesecond electromagnetic wave having the second frequency and the secondpower may be applied to the second RPS in the form of a continuous waveor by being pulsed, with the second on-off cycle. The secondelectromagnetic wave may be identical to or different from the firstelectromagnetic wave in terms of at least one property. For example, thesecond electromagnetic wave may be identical to the firstelectromagnetic wave in terms of frequency and on-off cycle, butdifferent from each other in terms of power.

The generated second plasma may include a plurality of components. Atleast one of the components may be used for etching the etching object300. For example, the second plasma may include the second radicals, thesecond ions, electrons, ultraviolet light, etc. The second radicals mayisotropically etch the etching object 300, whereas the second ions mayanisotropically etch the etching object 300. Accordingly, when theetching object 300 is isotropically etched, similar to the first plasma,the second ions, electrons, ultraviolet light, etc. are excluded by theshower head portion 150 and only the second radicals may be provided tothe process chamber 110.

The shower head portion 150 may include a first shower head 152 and asecond shower head 154. The first shower head 152 and the second showerhead 154 may be arranged to be spaced apart from each other. However,the structure of the shower head portion 150 is not limited to thestructure of FIG. 5. For example, the shower head portion 150 may beformed as one body and have two separate spaces in an integratedstructure, respectively performing functions of the first shower head152 and the second shower head 154.

The first shower head 152 may be arranged in an upper portion of theinside of the process chamber 110. The first shower head 152 may beconnected to the first RPS 132 through a first supply path 142 of aplasma supply path 140 and may receive the first plasma generated in thefirst RPS 132. Accordingly, the first shower head 152 may supply thefirst plasma generated in the first RPS 132 to the process chamber 110.For example, the first shower head 152 may spray the first plasmathrough a plurality of first holes 152H toward the etching object 300placed on the stage 120 in the process chamber 110.

The first holes 152H may be formed in the first shower head 152. Each ofthe first holes 152H, which is a path connecting an inner space of thefirst shower head 152 and the process chamber 110, may extend from alower surface of the first shower head 152 to be connected to theprocess chamber 110 by penetrating through the second shower head 154.For example, the first holes 152H may have a pipe structure penetratingthrough the second shower head 154.

The first holes 152H may have a size that substantially allows only thefirst radicals of the first plasma to pass while blocking most or all ofthe other components such as the first ions, electrons, etc. The size ofthe first holes 152H may be determined based on a concept of the Debyelength to increase the number of first radicals of the first plasma topass while blocking the other components. Alternatively, the first holes152H may be grounded.

Accordingly, the when first plasma flows through the first holes 152H,substantially only the first radicals pass through the first holes 152Hto be supplied to the process chamber 110. In contrast, the othercomponents such as the first ions, electrons, etc. may not pass throughthe first holes 152H and thus the first ions, electrons, etc. may not besupplied to the process chamber 110. Accordingly, the etching object 300may be prevented from being damaged by the first ions, electrons, etc.in the etching process. The size of each of the first holes 152H may beselected or changed according to the type of the first process gas.Since the first radicals are sprayed into the process chamber 110through the first holes 152H, the first holes 152H may correspond tospray holes of the first shower head 152.

The second shower head 154 may also be arranged in the upper portion ofthe inside of the process chamber 110. Also, as illustrated in FIG. 5,the second shower head 154 may be arranged under the first shower head152. The second shower head 154 may be connected to the second RPS 134through a second supply path 144 of the plasma supply path 140, and mayreceive the second plasma generated in the second RPS 134. The secondsupply path 144 may have a structure of being connected to the secondshower head 154 by penetrating through the first shower head 152.Accordingly, the second shower head 154 may supply the second plasmagenerated in the second RPS 134 to the process chamber 110. For example,the second shower head 154 may spray the second plasma generated in thesecond RPS 134 through a plurality of second holes 154H toward theetching object 300 placed on the stage 120 in the process chamber 110.

The second holes 154H may be formed in the second shower head 154. Thesecond holes 154H may have a size that allows substantially only thesecond radicals of the second plasma to pass while blocking most or allof the other components such as the second ions, electrons, etc. Thesize of the second holes 154H may be determined based on a concept ofthe Debye length to increase the number of second radicals of the firstplasma to pass while blocking the other components. Alternatively, thesecond holes 154H may be grounded.

Accordingly, the when second plasma flows through the second holes 154H,substantially only the second radicals pass through the second holes154H to be supplied to the process chamber 110. In contrast, the othercomponents such as the second ions, electrons, etc. may not pass throughthe second holes 154H and thus the second ions, electrons, etc. may notbe supplied to the process chamber 110. Accordingly, the substrate orthe material film on the substrate may be prevented from being damagedby the second ions, electrons, etc. in the etching process. The size ofeach of the second holes 154H may be selected or changed according tothe type of the second process gas. Since the second radicals aresprayed into the process chamber 110 through the second holes 154H, thesecond holes 154H may correspond to spray holes of the second showerhead 154.

The first holes 152H may be formed in a pipe structure penetratingthrough the second shower head 154. The space in the first holes 152Hmay be separated from an inner space of the second shower head 154.Accordingly, the first radicals may be sprayed directly toward theetching object 300 in the process chamber 110 through the first holes152H without being mixed with the second radicals in the second showerhead 154. The second radicals may be sprayed toward the etching object300 in the process chamber 110 through the second holes 154H. As such,since the first radicals and the second radicals are separately suppliedto the process chamber 110 through separated paths without being mixedwith each other in advance, the quantity and type of the first radicalsand the second radicals may be independently controlled. Accordingly,the etching process on the etching object 300 may be preciselycontrolled.

In addition, the etching object 300 may be anisotropically etched. Inthis case, the semiconductor device fabrication apparatus 100 accordingto the present exemplary embodiment may further include a biasapplication portion (not shown). The bias application portion may beelectrically connected to the stage 120. The bias application portionmay generate ions from the first radicals and the second radicals byapplying a bias to the first radicals and the second radicals sprayed bythe first and second shower heads 152 and 154. As the ions are appliedto the etching object 300, the etching object 300 may be anisotropicallyetched.

In the etching method using plasma according to the present exemplaryembodiment, water may be supplied to the process chamber 110 throughvarious paths. For example, in the first path indicated by “1.H₂O/NF₃/O₂/N₂,” water may be supplied to the first RPS 132 with NF₃, O₂,N₂, etc. that are the first process gas. In the second path indicated by“2. H₂O/O₂/N₂,” water may be supplied to the second RPS 134 with O₂, N₂,etc. that are the second process gas. In the third path indicated by “3.H₂O,” water may be supplied to the first supply path 142 with the firstplasma generated in the first RPS 132. In the fourth path indicated by“4. H₂O,” water may be supplied to the second supply path 144 with thesecond plasma generated in the second RPS 134. In the fifth pathindicated by “5. H₂O,” water may be supplied to the first shower head152 with the first plasma from the first RPS 132. In the sixth pathindicated by “6. H₂O,” water may be supplied to the second shower head154 with the second plasma generated in the second RPS 134. In theseventh path indicated by “7. H₂O,” water may be supplied directly tothe process chamber 110 through an entrance directly connected to theprocess chamber 110.

Alternatively, in the etching method using plasma according to thepresent exemplary embodiment, water may be supplied to the processchamber 110 through any one of the above-described seven paths orthrough two or more paths of the seven paths.

According to the etching method using plasma according to the presentexemplary embodiment, since the first and second plasma areindependently generated by using two RPS's arranged to be spaced apartfrom the process chamber 110 and supplied to the process chamber 110,the quantity and type of the plasma may be independently and preciselycontrolled in the semiconductor device fabrication process such asdeposition, etching, cleaning, etc. Accordingly, the etching of theetching object 300 may be uniformly and precisely controlled in thesemiconductor device fabrication process, for example, an etchingprocess.

Also, in the etching method using plasma according to the presentexemplary embodiment, since plasma is generated in at least one RPS andthe generated plasma is provided to the process chamber, and also, wateris supplied to the process chamber through various paths, the etchingefficiency with respect to the etching object, for example, an etch rateand a selectivity of the etching object, may be increased.

FIGS. 6 and 7 are graphs showing comparisons of an etch rate and aselectivity between a case in which water is supplied and a case inwhich water is not supplied, in the etching method using plasma of FIG.4. FIG. 6 is a graph showing a case in which water is supplied throughthe third path “3. H₂O” or the fourth path “4. H₂O” of FIG. 5. FIG. 7 isa graph showing a case in which water is supplied through the seventhpath “7. H₂O” of FIG. 5. In FIGS. 6 and 7, the x-axis simply denotes apositional difference between a case in which water does not exist(Reference (w.t.o. H₂O)) and a case in which water exists (H₂O), and they-axis denotes an etch rate (A/min).

Referring to FIG. 6, first, in a case in which water does not exist(Reference (w.t.o. H₂O)), the silicon nitride film has an etch rate ofabout 703.9, the polysilicon film has an etch rate of about 280, and thesilicon oxide film has an etch rate of about 33.5. For reference, in thegraph, Si₃N₄ is indicated as SiN and, SiO₂ is indicated as SiO forconvenience of explanation, and ER is an abbreviation of an etch rate.Next, in the case in which water exists (H₂O), the silicon nitride filmhas an etch rate of about 847.3, the polysilicon film has an etch rateof about 88.2, and the silicon oxide film has an etch rate of about13.4. Accordingly, it may be seen that, as water is supplied, the etchrate of the silicon nitride film may increase and the etch rates of thepolysilicon film and the silicon oxide film may decrease.

Accordingly, it may be seen that a selectivity of the silicon nitridefilm to the polysilicon film (SiN/p-Si) increases almost 4 times from2.5 when water does not exist to 9.6 when water exists. Also, it mayseen that a selectivity of the silicon nitride film to the silicon oxidefilm (SiN/SiO) increases almost 3 times from 21 when water does notexist to 63.2 when water exists.

As a result, in the etching method using plasma according to the presentexemplary embodiment, since the etching object, for example, the siliconnitride film, is etched by supplying water with plasma, etching may beperformed at a relatively high etch rate. Also, since the selectivity ofthe silicon nitride film is high with respect to the polysilicon filmand the silicon oxide film, only the silicon nitride film may be stablyand easily etched.

Referring to FIG. 7, first, in a case in which water does not exist(Reference (w.t.o. H₂O)), the silicon nitride film has an etch rate ofabout 482.1, the polysilicon film has an etch rate of about 39.7, andthe silicon oxide film has an etch rate of about 34.1. Next, in the casein which water exists (H₂O), the silicon nitride film has an etch rateof about 1009.9, the polysilicon film has an etch rate of about 10.8,and the silicon oxide film has an etch rate of about 33.1. Accordingly,similar to FIG. 6, it may be seen that, as water is supplied, the etchrate of the silicon nitride film may increase and the etch rates of thepolysilicon film and the silicon oxide film may decrease or may bealmost the same.

Accordingly, it may be seen that the selectivity of the silicon nitridefilm to the polysilicon film (SiN/p-Si) increases almost 8 times from12.1 when water does not exist to 93.5 when water exists. Also, it mayseen that a selectivity of the silicon nitride film to the silicon oxidefilm (SiN/SiO) increases more than twice from 14.1 when water does notexist to 30.5 when water exists.

Thus, similar to FIG. 6, since the etching object, for example, thesilicon nitride film, is etched by supplying water with plasma, etchingmay be performed at a relatively high etch rate. Also, since theselectivity of the silicon nitride film is high with respect to thepolysilicon film and the silicon oxide film, only the silicon nitridefilm may be stably and easily etched.

Also, as water is supplied through the seventh path “7. H₂O,” that is,water is directly supplied in the form of vapor through the entrancedirectly connected to the process chamber 110, the etch rate of thesilicon nitride film may increase over twice. Also, the selectivity ofthe silicon nitride film to the polysilicon film may be increased nearly8 times. Accordingly, when the polysilicon film and the silicon nitridefilm are included together and only the silicon nitride film is the onethat is to be selectively and rapidly etched, the method of supplyingwater through the seventh path “7. H₂O” may be efficient, compared tothe methods of supplying water through the other paths.

FIGS. 8A and 8B are, respectively, a flowchart illustrating a method ofgenerating and supplying plasma in a semiconductor device fabricationapparatus having two RPS's and a waveform diagram of an electromagneticwave applied corresponding thereto.

Referring to FIGS. 8A and 8B, in the method of generating and supplyingplasma according to the present exemplary embodiment, first, the firstprocess gas is supplied to the first RPS, and a first electromagneticwave E_(f1) having a first power is applied to the first RPS at a firstduty ratio, thereby generating the first plasma (S112). The firstprocess gas may include, for example, an F-based gas. The first powermay be a low power that is less than several hundreds of watts. The dutyratio may be defined to be a percentage of an on-period to a cycle whenan electromagnetic wave is cyclically applied being turned on and off.For example, when a power-on period T_(1on) of the first electromagneticwave E_(f1) is about 10 seconds and a power-off period T_(1off) is about10 seconds, an on-off cycle T_(1on-off) may be about 20 seconds and afirst duty ratio may be T_(1on)/T_(1on-off)*100(%)=50%. When the dutyratio is 100%, it may mean that an electromagnetic wave is continuouslyapplied without a power-off period. Accordingly, the firstelectromagnetic wave may be applied to the first RPS according to thefirst duty ratio in various methods.

Next, the second process gas is supplied to the second RPS, a secondelectromagnetic wave E_(f2) having the second power is applied at asecond duty ratio, thereby generating the second plasma (S114). Thesecond process gas may include, for example, an O-based gas. The secondpower may be a high power of several hundred watts or higher. The secondduty ratio may be presented by T_(2on)/T_(2on-off)*100(%). The secondduty ratio may be identical to or different from the first duty ratio.In the present exemplary embodiment, as illustrated in FIGS. 8A and 8B,the second duty ratio may be identical to the first duty ratio, but thepower-on period of the second duty ratio may be arranged to alternatewith the power-on period of the first duty ratio.

In the plasma generation method according to the present exemplaryembodiment, although the first plasma is generated and then the secondplasma is generated, this is merely an example. For example, the secondplasma may be first generated and then the first plasma may begenerated. Also, the first and second pieces of plasma may besimultaneously generated.

As illustrated in FIG. 8B, the first electromagnetic wave E_(f1) and thesecond electromagnetic wave E_(f2) may be applied in the form of acontinuous wave CW. However, the first electromagnetic wave E_(f1) andthe second electromagnetic wave E_(f2) may be applied by being pulsed orin a combined form of the CW form and the pulsed form. The pulsation maymean turning power on/off many times at a pulse frequency in theon-period. For example, when the frequency of an electromagnetic wave isabout 100 MHz and a pulse frequency is about 500 kHz, an electromagneticwave corresponding to 100M/500 k=200 cycles may be included in one pulsecycle. Also, the on-period and the off-period are included in one pulsecycle. When the length of the on-period is the same as the off-period inone pulse, an electromagnetic wave corresponding to 100 cycles may beincluded in the on-period of the pulse.

Next, the generated first and second plasmas are independently suppliedto the process chamber (see 110 of FIG. 5) (S130 c). For example, thefirst plasma may be supplied to the process chamber through the firstshower head (see 152 of FIG. 5), and the second plasma may be suppliedto the process chamber through the second shower head (see 154 of FIG.5). The supply of the first and second plasmas to the process chambermay mean etching the etching object (see 300 of FIG. 5) placed on thestage (see 120 of FIG. 5). Alternatively, although not shown in theflowchart of FIG. 8A, water may be supplied to the process chamber withthe first and second plasmas. The water may be supplied to the processchamber in the pretreatment method described above with reference toFIGS. 2 to 3B, or via various paths in the form of vapor as describedabove with reference to FIGS. 4 and 5.

The first and second pieces of plasma may be sequentially supplied tothe process chamber. For example, the first plasma may be first suppliedand then the second plasma may be supplied. In some cases, the supplyorder may be changed. Also, the first and second plasmas may besimultaneously supplied. Alternatively, the supply of the first plasmamay mean supply of radicals included in the first plasma, not the supplyof the all components of the first plasma. In other words, ions,electrons, etc. of the first plasma may be blocked when the first plasmapasses through the first holes (see 152H of FIG. 5), and only the firstradicals may be supplied to the process chamber. The supply of thesecond plasma may be understood to be the same as the supply of thefirst plasma.

In addition, when the etching object needs to be anisotropically etched,ions may be necessary. In this case, the ions may be generated in theradicals in the process chamber by applying a bias to the radicals.Accordingly, the etching object may be anisotropically etched using thegenerated ions.

FIGS. 9A and 9B are, respectively, a flowchart illustrating a method ofgenerating and supplying plasma in a semiconductor device fabricationapparatus having one RPS and a waveform diagram of an electromagneticwave applied corresponding thereto.

Referring to FIGS. 9A and 9B, in the method of generating and supplyingplasma according to the present exemplary embodiment, first, the firstprocess gas is supplied to the RPS, and the first plasma is generated byapplying the first electromagnetic wave E_(f1) having the first power(S210) to the RPS. The period where the first electromagnetic waveE_(f1) is applied may correspond to the first low-power period T_(n).Since only one RPS is in use, the RPS may be any one of the first RPS132 and the second RPS 134 of the semiconductor device fabricationapparatus 100 of FIG. 5. The first process gas and the first power arethe same as those described with reference to FIGS. 8A and 8B.

In the method of generating plasma according to the present exemplaryembodiment, when the first electromagnetic wave E_(f1) is repeated forthe same power application period, the duty ratio of the firstelectromagnetic wave E_(f1) may be defined. For example, as illustratedin FIG. 9B, when a low-power period T_(low) and a high-power periodT_(high) are the same and repeated at a power application cycle T_(p),the duty ratio of the first electromagnetic wave E_(f1) may be presentedby T₁₁/T_(low)*100(%).

Next, the first electromagnetic wave E_(f1) is turned off and the supplyof the first process gas is stopped (S220). The stopping of the supplyof the first process gas (S220) may correspond to the second low-powerperiod T₁₂ and may perform a function of gas stabilization.Alternatively, in the stopping of the supply of the first process gas(S220), the second process gas may be supplied to generate the secondplasma in the future.

Then, the second process gas is supplied to the RPS, and the secondplasma is generated by applying the second electromagnetic wave E_(f2)having the second power (S230) to the RPS. The period where the secondelectromagnetic wave E_(f2) is applied to the RPS may correspond to thefirst high-power period T₂₁. The second process gas and the second powerare the same as those described with reference to FIGS. 8A and 8B. Whenthe low-power period T_(low) of the first electromagnetic wave E_(f1)and the high-power period T_(high) of the second electromagnetic waveE_(f2) are the same and repeated at the power application cycle T_(p),the duty ratio of the second electromagnetic wave E_(f2) may be defined.For example, in FIG. 9B, the duty ratio of the second electromagneticwave E_(f2) may be presented by T₂₁/T_(high)*100(%).

Next, the second electromagnetic wave E_(f2) is turned off and thesupply of the second process gas is stopped (S240). The stopping of thesupply of the second process gas (S240) may correspond to the secondhigh-power period T₂₂ and may perform a function of gas stabilization.Alternatively, in the stopping of the supply of the second process gas(S240), the first process gas may be supplied for the generation of thefirst plasma in the future.

Alternatively, the first electromagnetic wave E_(f1) and the secondelectromagnetic wave E_(f2) may be applied in the form of a continuouswave CW, as illustrated in FIG. 9B. However, the first electromagneticwave E_(f1) and the second electromagnetic wave E_(f2) may be applied bybeing pulsed or in a combined form of the CW form and the pulsed form.

Next, the generated first and second plasmas are independently suppliedto the process chamber 110 (S250). The supply of the first and secondplasmas to the process chamber is the same as that described above withreference to FIGS. 8A and 8B. However, in the present exemplaryembodiment, since only one RPS is provided, only one shower head mayexist. As the generated first and second plasmas are supplied to theshower head according to a time sequence, the first and second plasmasmay be independently supplied to the process chamber. In some cases, twoshower heads exist and thus the first plasma is supplied to the firstshower head and the second plasma is supplied to the second shower head.Thus, the first and second plasmas may be independently supplied to theprocess chamber through the first and second shower heads.

Although not illustrated in the flowchart of FIG. 9A, water may besupplied to the process chamber with the first and second plasmas. Thewater may be supplied to the process chamber by the pretreatment methoddescribed with reference to FIGS. 2 to 3B. Also, as described withreference to FIGS. 4 and 5, the water may be supplied in the form ofvapor to the process chamber through various paths.

FIG. 10 is a flowchart illustrating an etching method using plasma,according to an exemplary embodiment.

Referring to FIG. 10, in the etching method using plasma according tothe present exemplary embodiment, first, plasma is generated in theprocess chamber (S310). In the etching method using plasma according tothe present exemplary embodiment, plasma may be directly in the processchamber by supplying the process gas to the process chamber and applyingpower to the process chamber without using the RPS. For example, plasmamay be directly generated in the process chamber by using the directplasma technology such as CCP or ICP.

Next, the etching object is etched by supplying water to the processchamber (S330). The water may be supplied by the pretreatment methodperformed on the etching object or by the method of supplying water tothe process chamber in the form of vapor. The pretreatment methodperformed on the etching object may be performed by keeping the etchingobject with water in a sealed container or by spraying steam toward theetching object as described above with reference to FIGS. 2 to 3B. Then,the arrangement of the pretreated etching object in the process chambermay correspond to the supply of water to the process chamber.

Alternatively, the method of supplying water to the process chamber inthe form of vapor is a method of supplying water directly to the processchamber through various paths, which is described in detail withreference to FIG. 11. In addition, since plasma is already present inthe process chamber or plasma is generated in the process chamber, thereis no need to separately supply plasma.

According to the etching method using plasma according to the presentexemplary embodiment, even if the direct plasma technology does not usethe RPS, by supplying water to the process chamber and etching theetching object using plasma, the etching efficiency with respect to theetching object, for example, an etch rate and a selectivity of theetching object, may be increased.

FIG. 11 is a schematic diagram illustrating a structure of asemiconductor device fabrication apparatus 100 a to show a concept ofsupplying water to the process chamber in the etching method usingplasma of FIG. 10.

Referring to FIG. 11, in the etching method using plasma according tothe present exemplary embodiment, the semiconductor device fabricationapparatus 100 a that does not include an RPS may be used. Thesemiconductor device fabrication apparatus 100 a may include the processchamber 110, the stage 120, and a shower head portion 150 a. The processchamber 110 and the stage 120 are the same as those described withreference to FIG. 5.

The shower head portion 150 a may include only one shower head. At leastone process gas supply path 160 may be connected to the shower headportion 150 a. In the present exemplary embodiment, the process gassupply path 160 may include two supply paths, for example, first andsecond supply paths 162 and 164. For example, of the process gas supplypath 160, the first process gas may be supplied through the first supplypath 162 and the second process gas may be supplied through the secondsupply path 164. The same process gas may be supplied through both ofthe first supply path 162 and the second supply path 164. Also, asillustrated in FIG. 5, the shower head portion 150 a may include twoshower heads, and the first supply path 162 is connected to the firstshower head and the second supply path 164 is connected to the secondshower head. Accordingly, the first process gas may be supplied throughthe first shower head and the second process gas may be supplied throughthe second shower head.

The water may be supplied to the process chamber 110 in the form ofvapor through various paths. For example, in the first path indicated by“1. H₂O,” water may be supplied to the shower head portion 150 a. In thesecond path indicated by “2. H₂O,” water may be supplied directly to theprocess chamber 110 through the entrance connected to the processchamber 110. In the third path indicated by “3. H₂O,” water may besupplied to the shower head portion 150 a with the process gases throughthe process gas supply path 160. For reference, the first and thirdpaths are similar to each other in that water is supplied to the showerhead portion 150 a. However, the first path may be different than thethird path in that, while in the case of the first path water issupplied to the shower head portion 150 a through a path that isdifferent from the path for the process gases, in the case of the thirdpath, water is supplied to the shower head portion 150 a through thesame path as the path for the process gases.

Alternatively, in the etching method using plasma according to thepresent exemplary embodiment, water may be supplied to the processchamber 110 through any one of the above-described three paths orthrough two or more paths.

FIG. 12 is a flowchart illustrating an etching method using plasma,according to an exemplary embodiment. For convenience of explanation,the descriptions provided above with reference to FIG. 1 are brieflyprovided or omitted.

Referring to FIG. 12, in the etching method using plasma according tothe present exemplary embodiment, first, plasma is generated in at leastone RPS (S410). The generation of plasma in at least one RPS is the sameas that described with reference to FIG.

Next, the etching object is etched by supplying hydrogen H₂ and plasmato the process chamber (see 110 of FIG. 14) (S430). The etching methodusing plasma according to the present exemplary embodiment may bedifferent from the etching method using, plasma of FIG. 1 in thathydrogen is supplied instead of water to the process chamber withplasma. The hydrogen may be supplied to the process chamber throughvarious paths, which is described in detail with reference to FIGS. 13and 14.

In the etching method using plasma according to the present exemplaryembodiment, since the etching object is etched by supplying hydrogen tothe process chamber with plasma, an etch efficiency with respect to theetching object may be improved. For example, an etch rate and aselectivity of the etching object may be increased. In particular, whenan F-based process gas is in use, as hydrogen is supplied to the processchamber with plasma, an etch rate and a selectivity of the etchingobject may be increased. The effect or principle of etching the etchingobject by supplying hydrogen with plasma is described below in detailwith reference to FIGS. 15A to 18.

In the etching method using plasma according to the present exemplaryembodiment, since the etching object is etched by generating plasma inat least one RPS and supplying hydrogen to the process chamber withplasma, the etching efficiency with respect to the etching object, forexample, an etch rate and a selectivity of the etching object, may beincreased.

FIG. 13 is a flowchart illustrating in detail the etching method usingplasma of FIG. 12.

Referring to FIG. 13, in the etching method using plasma according tothe present exemplary embodiment, first, plasma is generated in at leastone RPS (S410). The generation of plasma in at least one RPS is the sameas that described with reference to FIG.

Next, hydrogen is supplied to the process chamber through various paths(S420). For example, hydrogen may be supplied to at least one RPS duringthe etching process using plasma. Also, hydrogen may be supplied to aplasma supply path between the at least one RPS and the shower head, orto the shower head. The hydrogen supplied to the at least one RPS, theplasma supply path, or the shower head is finally supplied to theprocess chamber. Alternatively, in addition to the above methods,hydrogen may be directly supplied to the process chamber through theentrance directly connected to the process chamber.

Additionally, although FIG. 13 illustrates that hydrogen is supplied tothe process chamber after plasma is generated, the hydrogen may besupplied before or in the middle of the generation of plasma. The methodof supplying hydrogen to the process chamber during the etching processusing plasma is described in detail with reference to FIG. 14, by usingthe semiconductor device fabrication apparatus.

After the supply of hydrogen to the process chamber (S420), the etchingobject is etched by supplying plasma to the process chamber (S430 a).Alternatively, the plasma may be supplied with hydrogen or separatelyfrom hydrogen. For example, in the supply of hydrogen to the processchamber (S420), when the hydrogen is supplied to the at least one RPS,the plasma supply path, or the shower head, the plasma may be suppliedto the process chamber with hydrogen. However, when hydrogen is suppliedthrough the entrance directly connected to the process chamber, plasmamay be supplied to the process chamber separately from the hydrogen.

Alternatively, as described above regarding the sequence between thegeneration of plasma and the supply of hydrogen, hydrogen may besupplied before, in the middle of, or after the generation of plasma.Accordingly, the supply of hydrogen may be performed before the supplyof plasma to the process chamber, simultaneously with the supply ofplasma to the process chamber, or after the supply of plasma to theprocess chamber. Also, the supply of hydrogen may continue with thesupply of plasma during the etching process or may continue for apredetermined time only and then may be stopped. Furthermore, hydrogenmay be intermittently supplied during the etching process.

In the etching method using plasma according to the present exemplaryembodiment, since the etching object is etched by generating plasma inat least one RPS and supplying hydrogen to the process chamber withplasma through various paths, the etching efficiency with respect to theetching object, for example, an etch rate and a selectivity of theetching object, may be increased.

FIG. 14 is a schematic diagram illustrating a structure of asemiconductor device fabrication apparatus 100 having an RPS to show aconcept of supplying hydrogen to a process chamber in the etching methodusing plasma of FIG. 13. For convenience of explanation, thedescriptions provided above with reference to FIG. 5 are brieflyprovided or omitted.

Referring to FIG. 14, in the etching method using plasma according tothe present exemplary embodiment, the semiconductor device fabricationapparatus 100 having two RPS's may be used. The semiconductor devicefabrication apparatus 100 may include the process chamber 110, the stage120, the RPS portion 130, and the shower head portion 150, as describedwith reference to FIG. 5. Since the process chamber 110, the stage 120,the RPS portion 130, the shower head portion 150, and the etching object300 are already described with reference to FIG. 5, detaileddescriptions thereof are omitted. Also, since the first and secondprocess conditions, the first electromagnetic wave of the first power,and the second electromagnetic wave of the second power, the first andsecond process gases used in the first RPS 132 and the second RPS 134,and the first and second plasma respectively generated from the firstRPS 132 and the second RPS 134 are already described with reference toFIG. 5, detailed descriptions thereof are omitted.

In the etching method using plasma according to the present exemplaryembodiment, hydrogen may be supplied to the process chamber 110 throughvarious paths. For example, in the first path indicated by “1.H₂/NF₃/N₂/O₂,” hydrogen may be supplied to the first RPS 132 with NF₃,N₂, O₂, etc. that are the first process gas. In the second pathindicated by “2. H₂/N₂/O₂,” hydrogen may be supplied to the second RPS134 with N₂, O₂, etc. that are the second process gas. In the third pathindicated by “3. H₂,” hydrogen may be supplied to the first supply path142 with the first plasma generated in the first RPS 132. In the fourthpath indicated by “4. H₂,” hydrogen may be supplied to the second supplypath 144 with the second plasma generated in the second RPS 134. In thefifth path indicated by “5. H₂,” hydrogen may be supplied to the firstshower head 152 with the first plasma from the first RPS 132. In thesixth path indicated by “6. H₂,” hydrogen may be supplied to the secondshower head 154 with the second plasma generated in the second RPS 134.In the seventh path indicated by “7. H₂,” hydrogen may be supplieddirectly to the process chamber 110 through the entrance directlyconnected to the process chamber 110.

Alternatively, in the etching method using plasma according to thepresent exemplary embodiment, water may be supplied to the processchamber 110 through any one of the above-described seven paths orthrough two or more paths of the seven paths.

According to the etching method using plasma according to the presentexemplary embodiment, as described above with reference to FIG. 5, sincethe first and second plasma are independently generated by using twoRPS's arranged to be spaced apart from the process chamber 110 and aresupplied to the process chamber 110, the quantity and type of plasma maybe independently and precisely controlled in the semiconductor devicefabrication process such as deposition, etching, cleaning, etc.Accordingly, the etching of the etching object 300 may be uniformly andprecisely controlled in the semiconductor device fabrication process,for example, an etching process.

Also, in the etching method using plasma according to the presentexemplary embodiment, since plasma is generated in at least one RPS andthe generated plasma is provided to the process chamber, and also,hydrogen is supplied to the process chamber through various paths, theetching efficiency with respect to the etching object, for example, anetch rate and a selectivity of the etching object, may be increased.

FIGS. 15A and 15B are graphs showing comparisons of selectivityaccording to a flow rate ratio of nitrogen trifluoride (NF₃) andhydrogen (H₂) in the etching method using plasma of FIG. 14. In thegraphs of FIGS. 15A and 15B, the x-axis denotes a flow rate ratiobetween NF₃ and H₂, and the y-axis denotes an etching quantity oretching thickness of a film in units of angstroms Å. The etchingquantity may correspond to an etching quantity per minute. In this case,the etching quantity may be considered to be the same concept of theetch rate. Alternatively, NF₃ is assumed to be in a 100% dissociatedstate.

As it may be seen from the graph of FIG. 15A, when a flow rate ratiobetween NF₃ and H₂ is 2:3, the etching quantity of the silicon nitridefilm is the maximum at over 800 Å. When the flow rate ratio is less thanor greater than 2:3, it may be seen that the etching quantity of thesilicon nitride film decreases. Accordingly, it may be seen that theetching quantity of the silicon nitride film is maximized by supplying aflow rate of H₂ such that the ratio between [NF₃]*D and [H₂] is 2:3 inthe etching method using plasma. The above relationship may be expressedby Equation 1.[NF₃]*D:[H₂]=2:3  [Equation 1]

In Equation 1, “[NF₃]” denotes the flow rate of NF₃. “[H₂]” denotes theflow rate of H₂. “D” denotes a degree of dissociation of NF₃.Alternatively, a flow rate of gas may be presented in units of standardcubic centimeter per minute (sccm).

In detail, when NF₃ is dissociated by 100% and NF₃ of 200 sccm and H₂ of300 sccm are supplied to the process chamber, the etching quantity ofthe silicon nitride film may be maximized. If NF₃ is dissociated by 50%and NF₃ of 400 sccm and H₂ of 300 sccm are supplied to a processchamber, the etching quantity of the silicon nitride film may bemaximized. Alternatively, as the flow rate ratio is 2:3 by adjusting theflow rate of NF₃ with the flow rate of H₂ being fixed, the siliconnitride film may have a high etch rate and a high selectivity. Incontrast, the same result may be obtained by fixing the flow rate of NF₃and adjusting the flow rate of H₂.

As it may be seen from the graph of FIG. 15B, the etching quantity ofthe polysilicon film may be maintained in an almost minimum state untilthe flow rate ratio between NF₃ and H₂ reaches 2:3. In other words, whenthe flow rate ratio between NF₃ and H₂ exceeds 2:3, it may be seen thatthe etching quantity of the polysilicon film greatly increases.Accordingly, when both of the polysilicon film and the silicon nitridefilm are etched together, the flow rate ratio between NF₃ and H₂ exceeds2:3, the selectivity may be deteriorated.

Also, the silicon oxide film may have almost the same etching quantityregardless of the flow rate ratio between NF₃ and H₂. Strictly speaking,when the flow rate ratio between NF₃ and H₂ is 2:3, the silicon oxidefilm has a minimum etching quantity. Thus, when the silicon oxide filmand the silicon nitride film are etched together, the flow rate ratiobetween NF₃ and H₂ may be maintained at 2:3.

As a result, if at least one of the silicon oxide film and thepolysilicon film, and the silicon nitride film are included altogetherand only the silicon nitride film is the one that is to be selectivelyand easily etched, H₂ may be supplied to the process chamber such thatthe flow rate ratio between NF₃ and H₂ is 2:3. The flow rate of NF₃ maymean a flow rate by taking into account a degree of dissociation of NF₃.

FIGS. 16A and 16B are graphs showing comparisons of selectivityaccording to a flow rate ratio of NF₃ and H₂ in the etching method usingplasma of FIG. 14. In the graphs of FIGS. 16A and 16B, the x-axisdenotes a flow rate ratio between NF₃ and H₂, and the y-axis denotesselectivity. Alternatively, NF₃ is assumed to be in a 100% dissociatedstate.

As it may be seen from the graph of FIG. 16A, when a flow rate ratiobetween NF₃ and H₂ is 2:3, the selectivity of the silicon nitride filmto the polysilicon film (Si₃N₄/P—Si) may be the maximum at about 200.When the flow rate ratio is less than or greater than 2:3, it may beseen that the selectivity of the silicon nitride film to the polysiliconfilm may decrease. Accordingly, the above result may be anticipated bythe etching quantity of the polysilicon film and the silicon nitridefilm according to the flow rate ratio between NF₃ and H₂ of FIGS. 15Aand 15B.

Referring to FIG. 16B, when the flow rate ratio between NF₃ and H₂ is2:3, the selectivity of the silicon nitride film to the silicon oxidefilm (Si₃N₄/SiO₂) is over 650 at its maximum. When the flow rate ratiois less or greater than 2:3, the selectivity of the silicon nitride filmto silicon oxide film may decrease. The result may be anticipated by theetching quantity of the silicon oxide film and the silicon nitride filmaccording to the flow rate ratio between NF₃ and H₂ of FIGS. 15A and15B.

All the results of FIGS. 15A to 16B may be as shown by Table 1 below.

TABLE 1 Etching Quantity (Å) Selectivity NF₃:H₂ Si₃N₄ P—Si SiO₂Si₃N₄/P—Si Si₃N₄/SiO₂ 1.5:3 1 2 4 0.4 0.2 2.0:3 857 4 1 196.6 661.62.3:3 412 28 2 15.0 170.9 2.7:3 581 81 5 7.1 106.6

As indicated by the bold font, when the flow rate ratio of NF₃ and H₂ is2:3, the etching quantity of the silicon nitride film may be themaximum, the etching quantity of the silicon oxide film may be theminimum, and the etching quantity of the polysilicon film may bemaintained at a very small quantity. Also, it may be seen that theselectivity of the silicon nitride film to the polysilicon film(Si₃N₄/P—Si) and the selectivity of the silicon nitride film to thesilicon oxide film (Si₃N₄/SiO₂) are the maximum.

FIG. 17 is a graph showing a degree of dissociation of nitrogentrifluoride according to applied power. In the graph of FIG. 17, thex-axis denotes the power of an applied electromagnetic wave in units ofwatts (W). The y-axis denotes a degree of dissociation of NF₃ as apercentage (%). Alternatively, RGA is an abbreviation of a residual gasanalyzer, and RGA Recipe 1 to RGA Recipe 4 mean that the processconditions slightly differ.

As shown in the graph of FIG. 17, regardless of the process condition,when the power is equal to or greater than 500 W, it may be seen that adegree of dissociation of NF₃ reaches almost 100%. Also, when the poweris equal to or greater than 200 W, it may be seen that a degree ofdissociation of NF₃ is equal to or greater than 50% regardless of theprocess conditions. Accordingly, by adjusting the flow rate of H₂ bytaking into account the degree of dissociation of NF₃ according to thepower of the process conditions, in the etching process using plasma,the etch rate and selectivity of the silicon nitride film may beoptimized or maximized.

In detail for example, when the degree of dissociation of NF₃ is closeto 100% by applying high power of more than 1000 W, it is appropriatethat the flow rate ratio between NF₃ and H₂ is 2:3. Accordingly, theetch rate and selectivity of the silicon nitride film may be optimizedor maximized. However, when the degree of dissociation of NF₃ is about50% by applying low power, a high selectivity and a high etch rate ofthe silicon nitride film may be embodied by setting the flow rate ratiobetween NF₃ and H₂ to be about 4:3.

When H₂ is not used in the related art, a degree of dissociation islowered to obtain a high selectivity. Accordingly, obtaining a high etchrate is sacrificed instead. Otherwise, to obtain a high etch rate,selectivity is sacrificed. However, in the etching method using plasmaaccording to the present exemplary embodiment, since a high selectivitymay be maintained not only at low power but also at high power as H₂ issupplied, a high selectivity and a high etch rate may be simultaneouslyachieved.

FIG. 18 is a graph showing the amount of F radicals according to theamount of H₂. In FIG. 18, the x-axis denotes the flow rate of H₂ inunits of sccm, and the y-axis denotes a density (Y_(F)) of F radicals inunits of arbitrary units (au).

For reference, the plasma generated by applying power to the process gasNF₃ may include F, NF, or NF₂ radicals. The NF and NF₂ radicals may actonly for etching of the silicon nitride film. However, the F radicalsmay act not only for etching of the silicon nitride film but also foretching of the polysilicon film and the silicon oxide film. Accordingly,although F radicals are generated much to obtain a high etch rate, the Fradicals are generated less to increase selectivity with respect to thepolysilicon film and the silicon oxide film. In this state, when H₂ issupplied, the F radicals may be removed by the reaction H+F→HF, and theF radicals of a main etchant of the silicon oxide film and thepolysilicon film may be removed.

As shown in FIG. 18, as the flow rate of H₂ increases, it may be seenthat the amount of F radicals gradually decreases. As a result, when anappropriate flow rate of H₂ is supplied, a high etch rate and a highselectivity of the silicon nitride film may be simultaneously obtained.

Accordingly, in the etching method using plasma according to the presentexemplary embodiment, since the flow rate of H₂ is adjusted based on theresult of the graph of FIG. 18 and by taking into account the flow rateratio, the process conditions, and the dissociation degree of NF₃ withrespect to power according to the results of graphs of FIG. 15A to 17,the etch rate and selectivity of the silicon nitride film may beoptimized or maximized in the etching process using plasma.

FIG. 19 is a flowchart illustrating an etching method using plasma,according to another exemplary embodiment.

Referring to FIG. 19, in the etching method using plasma according tothe present exemplary embodiment, first, plasma is generated in theprocess chamber (S510). In the etching method using plasma according tothe present exemplary embodiment, plasma may be directly generated inthe process chamber by supplying a process gas to the process chamberwithout using the RPS and by applying power to the process chamber. Forexample, plasma may be directly generated in the process chamber byusing the direct plasma technology such as CCP or ICP.

Next, the etching object is etched by supplying hydrogen to the processchamber (S530). The hydrogen may be supplied to the process chamberthrough various paths. For example, the hydrogen may be supplied to theprocess gas supply path, the shower head, or the process chamber throughthe entrance directly connected to the process chamber. The supply ofhydrogen to the process chamber is described in detail with reference toFIG. 20. In addition, since plasma is already present or generated inthe process chamber, the plasma does not need to be separately supplied.

In the etching method using plasma according to the present exemplaryembodiment, since the etching object is etched by supplying hydrogen tothe process chamber and using plasma even if the direct plasmatechnology does not use the RPS, the etching efficiency with respect tothe etching object, for example, an etch rate and a selectivity of theetching object, may be increased.

FIG. 20 is a schematic diagram illustrating a structure of asemiconductor device fabrication apparatus 100 a to show a concept ofsupplying hydrogen to a process chamber in the etching method usingplasma of FIG. 19. For convenience of explanation, the descriptionsprovided above with reference to FIG. 11 are briefly provided oromitted.

Referring to FIG. 20, in the etching method using plasma according tothe present exemplary embodiment, the semiconductor device fabricationapparatus 100 a having no RPS may be used. The semiconductor devicefabrication apparatus 100 a may include the process chamber 110, thestage 120, and the shower head portion 150 a. The process chamber 110,the stage 120, and the shower head portion 150 a are the same as thosedescribed with reference to FIG. 11.

Hydrogen may be supplied to the process chamber 110 through variouspaths. For example, in the first path indicated by “1. H₂,” hydrogen maybe supplied to the shower head portion 150 a. In the second pathindicated by “2. H₂,” hydrogen may be supplied directly to the processchamber 110 through the entrance directly connected to the processchamber 110. In the third path indicated by “3. H₂,” hydrogen may besupplied to the shower head portion 150 a with the process gases throughthe process gas supply path 160. For reference, the first path and thethird path are similar to each other in that hydrogen is supplied to theshower head portion 150 a. However, in the first path, hydrogen issupplied to the shower head portion 150 a through a path that isdifferent from the path for supplying the process gases and, in thethird path, hydrogen is supplied to the shower head portion 150 athrough the same path as the path for supplying the process gases.

In the etching method using plasma according to the present exemplaryembodiment, hydrogen may be supplied to the process chamber 110 throughany one of the above-described three paths or through two or more paths.

FIG. 21 is a flowchart illustrating an etching method using plasma,according to another exemplary embodiment. For convenience ofexplanation, the descriptions provided above with reference to FIGS. 1and 12 are briefly provided or omitted.

Referring to FIG. 21, in the etching method using plasma according tothe present exemplary embodiment, first, plasma is generated in at leastone RPS (S610). The generation of plasma in the RPS is the same as thatdescribed with reference to FIG. 1.

Next, water and hydrogen are supplied with plasma to the processchamber, thereby etching the etching object (S630). The etching methodusing plasma according to the present exemplary embodiment may bedifferent from the etching method using plasma of FIG. 1 or 12 in thatwater and hydrogen are supplied with plasma to the process chamber. Thewater and hydrogen may be supplied to the process chamber throughvarious paths, which is described below in detail with reference toFIGS. 22 to 25.

In the etching method using plasma according to the present exemplaryembodiment, since the etching object is etched by supplying water andhydrogen to the process chamber with plasma, the etching efficiency withrespect to the etching object, for example, an etch rate and aselectivity of the etching object, may be increased. In particular, whenthe fluorine (F)-based process gas is used, as water and hydrogen aresupplied to the process chamber with plasma, an etch rate and aselectivity of the etching object may be increased. The method ofetching the etching object by supplying water and hydrogen with plasmamay have a combined effect of the method of etching the etching objectby supplying water with plasma and the method of etching the etchingobject by supplying hydrogen with plasma. For example, the effect ofsupplying water and plasma, described with reference to FIGS. 6 and 7,and the effect of supplying hydrogen and plasma, described withreference to FIGS. 15A to 16B, may be compositely obtained. In addition,hydrogen may be supplied by taking into account the optimal flow rateratio with respect to NF₃ according to Equation 1.

In the etching method using plasma according to the present exemplaryembodiment, since plasma is generated in the at least one RPS and plasmais supplied to the process chamber with water and hydrogen to etch theetching object, the etching efficiency with respect to the etchingobject, for example, an etch rate and a selectivity of the etchingobject, may be increased.

FIG. 22 is a flowchart illustrating in detail the etching method usingplasma of FIG. 21. For convenience of explanation, the descriptionsprovided above with reference to FIGS. 2 and 13 are briefly provided oromitted.

Referring to FIG. 22, in the etching method using plasma according tothe present exemplary embodiment, first, a pretreatment using water isperformed on the etching object (S602). The pretreatment using water onthe etching object is the same as that described with reference to FIGS.2 to 3B.

Next, the pretreated etching object is arranged in the process chamber(S604). The etching object may be arranged on the upper surface of thestage (see 120 of FIG. 23) located in a lower portion of the processchamber.

After arranging the etching object in the process chamber, at least oneRPS generates plasma (S610). The generation of plasma in the RPS is thesame as that described with reference to FIG. 1.

Then, hydrogen and plasma are supplied to the process chamber and thusthe etching object is etched (S630 a). Although in FIG. 21 water andhydrogen are supplied to the process chamber with plasma, according tothe present exemplary embodiment, water may be considered to be alreadysupplied to the process chamber when the pretreated etching object isarranged in the process chamber. In the etching operation (S630 a), onlythe hydrogen and plasma are supplied. In other words, the etchingoperation (S630) of FIG. 21 may correspond to both an arrangementoperation (S604) and an etching operation (S630 a) of the presentexemplary embodiment.

The method of supplying hydrogen to the process chamber with plasma issubstantially the same as that described with reference to FIGS. 12 to14. For example, hydrogen may be supplied to the process chamber throughvarious paths. According to the present exemplary embodiment, the methodof pretreating the etching object by using water and supplying hydrogento the process chamber through various paths is described in detail byusing the semiconductor device fabrication apparatus with reference toFIG. 23.

FIG. 23 is a schematic diagram illustrating a structure of asemiconductor device fabrication apparatus 100 having an RPS to show aconcept of supplying water and hydrogen to a process chamber in theetching method using plasma of FIG. 22. For convenience of explanation,the descriptions provided above with reference to FIG. 14 is brieflyprovided or omitted.

Referring to FIG. 23, in the etching method using plasma according tothe present exemplary embodiment, the semiconductor device fabricationapparatus 100 having two RPS's may be used. The semiconductor devicefabrication apparatus 100 may include the process chamber 110, the stage120, the RPS portion 130, and the shower head portion 150. The processchamber 110, the stage 120, the RPS portion 130, the shower head portion150, and the etching object 300 are the same as those described withreference to FIG. 5. Also, the first and second process conditions, thefirst electromagnetic wave of the first power, the secondelectromagnetic wave of the second power, the first and second processgases respectively used for the first RPS 132 and the second RPS 134,and the first and second plasmas respectively generated from the firstRPS 132 and the second RPS 134 are the same as those described withreference to FIG. 5.

In the etching method using plasma according to the present exemplaryembodiment, first, before the plasma etching process is performed, theetching object 300 that has been pretreated with water may be arrangedon the upper surface of the stage 120. In the pretreatment of theetching object 300 with water, as described with reference to FIGS. 2 to3B, the surface of the etching object 300 may be coated with the vapor230 a through a method of keeping an etching object with water in asealed container or spraying steam onto an etching object.

After the etching object 300 having been pretreated using water isarranged on the upper surface of the stage 120, hydrogen and plasma aresupplied to the process chamber 110 so that the etching process may beperformed using plasma. The hydrogen may be supplied to the processchamber 110 through various paths. For example, as illustrated in FIG.23, the hydrogen may be supplied to the process chamber 110 through atleast one of the seven paths, which is the same as that described withreference to FIG. 14.

In the etching method using plasma according to the present exemplaryembodiment, since the first and second plasma are independentlygenerated using two RPS's that are arranged to be spaced apart from theprocess chamber 110 and supplied to the process chamber 110, asdescribed with reference to FIG. 5, the quantity and type of plasma maybe independently and precisely controlled in the semiconductor devicefabrication process such as deposition, etching, cleaning, etc.Accordingly, in the semiconductor device fabrication process, forexample, the etching of the etching object 300 in the etching process,may be controlled to be performed uniformly and precisely.

Also, in the etching method using plasma according to the presentexemplary embodiment, since water is supplied through the pretreatmentof the etching object, plasma is generated in at least one RPS andsupplied to the process chamber, and hydrogen is supplied to the processchamber through various paths, the etching efficiency with respect tothe etching object, for example, an etch rate and a selectivity of theetching object, may be increased.

FIG. 24 is a flowchart illustrating in detail the etching method usingplasma of FIG. 21. For convenience of explanation, the descriptionsprovided above with reference to FIGS. 4 and 13 are briefly provided oromitted.

Referring to FIG. 24, in the etching method using plasma according tothe present exemplary embodiment, first, plasma is generated in at leastone RPS (S610). The generation of plasma in the RPS is the same as thatdescribed with reference to FIG. 1.

Next, water and hydrogen are supplied to the process chamber throughvarious paths (S620). The water may be supplied to the process chamberin the form of vapor. For example, water and hydrogen may be supplied toat least one RPS. Also, water and hydrogen may be supplied to the plasmasupply path between the at least one RPS and the shower head, or to theshower head. The water and hydrogen supplied to the at least one RPS,the plasma supply path, or the shower head may be finally supplied tothe process chamber. Alternatively, in addition to the above methods,the water and hydrogen may be directly supplied to the process chamberthrough the entrance directly connected to the process chamber. Thewater and hydrogen may be supplied through different paths, thus notbeing supplied simultaneously through any one path.

In addition, although FIG. 24 illustrates that water and hydrogen aresupplied to the process chamber after plasma is generated, the water andhydrogen may be supplied to the process chamber before or in the middleof the generation of plasma. The method of supplying water and hydrogento the process chamber is described in detail by using semiconductordevice fabrication apparatus with reference to FIG. 25.

After the supply of water and hydrogen to the process chamber (S620),plasma is supplied to the process chamber and the etching object isetched (S630 b). Alternatively, plasma may be supplied together withwater and hydrogen or separately from water and hydrogen. For example,in the supply of water and hydrogen to the process chamber (S620), whenthe water and hydrogen are supplied to at least one of the RPS, theplasma supply path, and the shower head, the plasma may be supplied tothe process chamber with water and hydrogen. However, when water andhydrogen are supplied through the entrance directly connected to theprocess chamber, plasma may be supplied to the process chamberseparately from water and hydrogen. Furthermore, any one of water andhydrogen may be supplied with plasma and the other one may be separatelysupplied. Also, water, hydrogen, and plasma may be separately suppliedfrom one another.

Alternatively, as described above about the sequence between thegeneration of plasma and the supply of water and hydrogen, water andhydrogen may be supplied before, in the middle of, or after thegeneration of plasma. Accordingly, the supply of water and hydrogen maybe performed before, in the middle of, or after the supply of plasma tothe process chamber. Also, the supply of water and hydrogen may bemaintained with the supply of plasma or may be discontinued after beingsupplied for a predetermined time, during the etching process.Furthermore, water and hydrogen may be intermittently supplied duringthe etching process. Also, each of water and hydrogen may be supplied inthe same order or pattern, or in a totally different order or pattern.

In the etching method using plasma according to the present exemplaryembodiment, plasma is generated in at least one RPS and water andhydrogen are supplied with plasma to the process chamber through variouspaths, thereby etching the etching object, and the etching efficiencywith respect to the etching object, for example, an etch rate and aselectivity of the etching object, may be increased.

FIG. 25 is a schematic diagram illustrating a structure of asemiconductor device fabrication apparatus 100 having an RPS to show aconcept of supplying water and hydrogen to a process chamber in theetching method using plasma of FIG. 24. For convenience of explanation,the descriptions provided above with reference to FIGS. 5 and 14 arebriefly provided or omitted.

Referring to FIG. 25, in the etching method using plasma according tothe present exemplary embodiment, the semiconductor device fabricationapparatus 100 having two RPS's may be used. The semiconductor devicefabrication apparatus 100 may include the process chamber 110, the stage120, the RPS portion 130, and the shower head portion 150. The processchamber 110, the stage 120, the RPS portion 130, the shower head portion150, and the etching object 300 are the same as those described withreference to FIG. 5. Also, the first and second process conditions, thefirst electromagnetic wave of the first power, the secondelectromagnetic wave of the second power, the first and second processgases respectively used for the first RPS 132 and the second RPS 134,and the first and second plasma respectively generated from first RPS132 and the second RPS 134 are the same as those described withreference to FIG. 5.

In the etching method using plasma according to the present exemplaryembodiment, water and hydrogen are supplied to the process chamber 110through various paths. For example, in the first path indicated by “1.H₂/NF₃/O₂/N₂” and “1. H₂O/N₂/O₂N₂,” hydrogen may be supplied to thefirst RPS 132 with NF₃, N₂, O₂, etc. that are the first process gas, andwater may be supplied to the second RPS 134 with N₂, O₂, etc. that arethe second process gas. Alternatively, in the first path, water andhydrogen may be supplied to the opposite RPS's. In other words, watermay be supplied to the first RPS 132 with the first process gas andhydrogen may be supplied to the second RPS 134 with the second processgas. Also, in some cases, both of water and hydrogen may be supplied toany one of the first RPS 132 and the second RPS 134.

As the second path indicated by “2. H₂O or H₂” and “2. H₂ or H₂O,” watermay be supplied to the first supply path 142 with the first plasma fromthe first RPS 132, and hydrogen may be supplied to the second supplypath 144 with the second plasma generated in the second RPS 134. Incontrast, hydrogen may be supplied to the first supply path 142, andwater may be supplied to the second supply path 144. In some cases, bothof water and hydrogen may be supplied to any one of the first supplypath 142 and the second supply path 144.

As the third path indicated by “3. H₂O or H₂” and “3. H₂ or H₂O,” watermay be supplied to the first shower head 152 with the first plasma fromthe first RPS 132, and hydrogen may be supplied to the second showerhead 154 with the second plasma generated in the second RPS 134. Incontrast, hydrogen may be supplied to the first shower head 152, andwater may be supplied to the second shower head 154. In some cases, bothof water and hydrogen may be supplied to any one of the first showerhead 152 and the second shower head 154.

Finally, in the fourth path indicated by “4. H₂O and H₂,” the water andhydrogen may be directly supplied to the process chamber 110 through theentrance directly connected to the process chamber.

Alternatively, in the etching method using plasma according to thepresent exemplary embodiment, water and hydrogen may be supplied to theprocess chamber 110 through any one or two or more paths of theabove-described four paths. Also, water and hydrogen may be suppliedthrough paths different from each other. For example, hydrogen may besupplied to the process chamber 110 through the RPS portion 130, andwater may be directly supplied to the process chamber 110 through theentrance directly connected to the process chamber 110.

In the etching method using plasma according to the present exemplaryembodiment, since the first and second plasma are independentlygenerated by using the two RPS's arranged spared apart from the processchamber 110 and supplied to the process chamber 110, in thesemiconductor device fabrication process such as deposition, etching,cleaning, etc., the quantity and type of plasma may be independently andprecisely controlled. Accordingly, in the semiconductor devicefabrication process, for example, in the etching process, etching on theetching object 300 may be uniformly and precisely controlled.

Also, in the etching method using plasma according to the presentexemplary embodiment, since plasma is generated in at least one RPS andthe generated plasma is supplied to the process chamber, and also waterand hydrogen are supplied to the process chamber through various paths,the etching efficiency with respect to the etching object, for example,an etch rate and a selectivity of the etching object, may be remarkablyincreased.

FIG. 26 is a flowchart illustrating a method of fabricating asemiconductor device including an etching method using plasma, accordingto an exemplary embodiment.

Referring to FIG. 26, according to the present exemplary embodiment ofthe method of fabricating a semiconductor device, first, plasma isgenerated (S110). The generation of plasma may be the generation ofplasma in at least one RPS described in FIGS. 1, 2, 4, 12, 13, 21, 22,and 24, or the direct generation of plasma in the process chamberdescribed in FIGS. 10 and 19. Since the generation of plasma is alreadydescribed, detailed descriptions thereof are omitted.

Next, the etching object is etched (S130). In the operation of etchingthe etching object (S130), at least one of water and hydrogen may besupplied to the process chamber with plasma and thus the etching objectmay be etched. The supply of water may include the supply of waterthrough a pretreatment and the supply of water in the form of vapor. Thesupply of water in the form of vapor and the supply of hydrogen mayinclude the supply of water and hydrogen to the process chamber throughvarious paths. Since the method of supplying at least one of water andhydrogen to the process chamber with plasma is described for theabove-described various exemplary embodiments, detailed descriptionsthereof are omitted.

Next, a subsequent semiconductor process is performed (S150). Thesubsequent semiconductor process may include various processes, forexample, a deposition process, an etching process, an ion process, acleaning process, etc. The deposition process may include variousmaterial layer forming processes such as CVD, sputtering, spin coating,etc. The etching process may be the above-described etching processusing plasma or the etching process that does not use plasma. The ionprocess may include a process such as ion injection, diffusion,annealing, etc. Integrated circuits and wirings required for asemiconductor device may be formed by performing the subsequentsemiconductor process.

Alternatively, the subsequent semiconductor process may include apackaging process in which a semiconductor device is mounted on aprinted circuit board (PCB) and hermetically sealed using a sealingmember. Also, the subsequent semiconductor process may include a testprocess of testing a semiconductor device or package. The semiconductordevice or semiconductor package may be completed by performing thesubsequent semiconductor process.

While the inventive concept has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodthat various changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

In the etching method using plasma according to the present inventiveconcept, plasma is generated in at least one RPS and at least one ofwater and hydrogen is supplied to the process chamber with plasma,thereby etching the etching object, the etching efficiency with respectto the etching object, for example, an etch rate and a selectivity ofthe etching object, may be increased.

Also, in the etching method using plasma according to the presentinventive concept, plasma is directly generated in the process chamberand at least one of water and hydrogen is supplied to the processchamber, thereby etching the etching object, the etching efficiency withrespect to the etching object may be increased as well.

Furthermore, in the etching method using plasma according to the presentinventive concept, when two or more RPS's are used, since plasmas areindependently generated in the two or more RPS's and supplied to theprocess chamber, in the etching and/or cleaning process, the quantityand type of plasma may be independently and precisely controlled.Accordingly, since the etching and/or cleaning of the etching object maybe uniformly and precisely controlled, and plasma is supplied to theprocess chamber with at least one of water and hydrogen, the etchingefficiency with respect to the etching object may be improved.

What is claimed is:
 1. An etching method using plasma, the methodcomprising: generating plasma by supplying process gases to at least oneremote plasma source (RPS) and applying power to the at least one RPS;and etching an etching object by supplying water (H₂O) and hydrogen (H₂)to a process chamber with the plasma, wherein the water and the hydrogenare supplied to the process chamber without being supplied to the atleast one RPS.
 2. The method of claim 1, wherein the at least one RPScomprises at least two RPS's and the water is supplied during apretreatment step performed on the etching object.
 3. The method ofclaim 2, wherein the pretreatment step is performed by placing theetching object with water in a sealed space or spraying steam toward theetching object.
 4. The method of claim 1, wherein the at least one RPScomprises at least two RPS's, and the water is supplied, in the form ofvapor, to at least one of: at least one path between the RPS's and theprocess chamber, a shower head arranged in an upper portion of theinside of the process chamber, and an entrance connected to the processchamber.
 5. The method of claim 1, wherein the at least one RPScomprises at least two RPS's, and the hydrogen is supplied to at leastone of: at least one path between the RPS's and the process chamber, ashower head arranged in an upper portion of the inside of the processchamber, and an entrance connected to the process chamber.
 6. The methodof claim 5, supplying the process gases comprises supplying nitrogentrifluoride (NF₃) to at least one of the RPS's, and supplying hydrogen(H₂) to satisfy the equation,[NF₃]*D:[H₂]=2:3, wherein “[NF₃]” denotes a flow rate of NF₃, “[H₂]”denotes a flow rate of H₂, and “D” denotes a degree of dissociation ofNF₃.
 7. The method of claim 1, wherein the at least one RPS comprises atleast two RPS's, and NF₃, N₂, and O₂ are supplied to a first RPS of theRPS's and O₂ and N₂ are supplied to a second RPS of the RPS's.
 8. Themethod of claim 7, wherein etching the etching object comprisesselectively etching among a silicon nitride (Si₃N₄) film and at leastone of a polysilicon (p-Si) film and a silicon oxide (SiO₂) film, thesilicon nitride (Si₃N₄) film.
 9. An etching method using plasma, themethod comprising: generating plasma by supplying process gases to aprocess chamber and applying power to the process chamber; and etchingan etching object by supplying at least one of water (H₂O) and hydrogen(H₂) to the process chamber with the plasma, wherein the water issupplied during a pretreatment step performed on the etching objectbefore an etching process, or in the form of vapor during the etchingprocess, and wherein the supply of the water during the pretreatmentstep is provided by placing the etching object with water in a sealedspace or spraying steam toward the etching object.
 10. The method ofclaim 9, wherein the supply of the water in the form of vapor issupplied during the etching process by supplying the water in the formof vapor to a shower head arranged in an upper portion of the processchamber or to an entrance connected to the process chamber.
 11. Themethod of claim 9, wherein the hydrogen is supplied to a shower headarranged in an upper portion of the process chamber or to an entranceconnected to the process chamber.
 12. The method of claim 9, whereinsupplying process gases comprises supplying nitrogen trifluoride (NF₃),and hydrogen (H₂) satisfy the equation,[NF₃]*D:[H₂]=2:3, wherein “[NF₃]” denotes a flow rate of NF₃, “[H₂]”denotes a flow rate of H₂, and “D” denotes a degree of dissociation ofNF₃.
 13. An etching method using plasma, the method comprising:generating a plasma in at least two remote plasma sources (RPS's); andsupplying at least one of water (H₂O) and hydrogen (H₂) to an etchingobject in a process chamber in a presence of the plasma to etch theetching object.
 14. The etching method of claim 13, wherein generating aplasma comprises supplying one or more process gasses to the at leasttwo RPS's and applying power to the at least two RPS's.
 15. The etchingmethod of claim 13, wherein generating a plasma comprises supplying oneor more process gasses to the process chamber and applying power to theprocess chamber.
 16. The etching method of claim 13, wherein supplyingat least one of water (H₂O) and hydrogen (H₂) to the etching objectcomprises supplying a water vapor to the process chamber.
 17. Theetching method of claim 14, wherein hydrogen is supplied to at least oneof: a path between the RPS's and the process chamber, a shower headarranged in an upper portion of an inside of the process chamber, and anentrance connected to the process chamber.
 18. The etching method ofclaim 13, wherein supplying the process gases comprises supplyingnitrogen trifluoride (NF₃), and hydrogen (H₂) to satisfy the equation,[NF₃]*D:[H₂]=2:3, wherein “[NF₃]” denotes a flow rate of NF₃, “[H₂]”denotes a flow rate of H₂, and “D” denotes a degree of dissociation ofNF₃.